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| Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 VDS @ Tjmax RDS(on) ID 560 0.6 7.6 V A Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 * P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP08N50C3 SPI08N50C3 SPA08N50C3 Package P-TO220-3-1 P-TO262-3-1 Ordering Code Q67040-S4567 Q67040-S4568 Marking 08N50C3 08N50C3 08N50C3 P-TO220-3-31 Q67040-S4576 Maximum Ratings Parameter Symbol ID Value SPP_I SPA Unit Continuous drain current TC = 25 C TC = 100 C A 7.6 4.6 7.61) 4.61) 22.8 230 0.5 7.6 20 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V ID puls EAS EAR IAR VGS VGS Ptot 22.8 230 0.5 7.6 20 30 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C 83 32 Operating and storage temperature T j , Tstg -55...+150 C Page 1 2003-06-27 Final data Maximum Ratings Parameter SPP08N50C3, SPI08N50C3 SPA08N50C3 Symbol Value Unit Drain Source voltage slope VDS = 400 V, ID = 7.6 A, Tj = 125 C dv/dt 50 V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=350A, VGS =VDS V DS=500V, V GS=0V, Tj=25C Tj=150C Symbol min. RthJC RthJC_FP RthJA RthJA FP Tsold - Values typ. - Unit max. 1.5 3.9 62 80 260 C K/W Values typ. 600 3 0.5 0.5 1.5 1.2 max. 3.9 500 2.1 - Unit V V(BR)DS VGS=0V, ID=7.6A A 1 100 100 0.6 nA Gate-source leakage current IGSS V GS=20V, V DS=0V V GS=10V, I D=4.6A Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Page 2 2003-06-27 Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol gfs Ciss Coss Crss Conditions min. VDS2*ID*R DS(on)max, ID=4.6A VGS=0V, VDS=25V, f=1MHz Values typ. 6 750 350 12 56 30 6 5 60 7 max. - Unit S pF Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VGS=0V, VDS=400 td(on) tr td(off) tf VDD=380V, VGS=0/10V, ID=7.6A, RG =12 - ns V DD=400V, ID=7.6A - 3 17 32 5 - nC V DD=400V, ID=7.6A, V GS=0 to 10V V(plateau) VDD=400V, ID=7.6A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Soldering temperature for TO-263: 220C, reflow 4C 5C o(er) o(tr) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-06-27 Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.024 0.046 0.085 0.308 0.317 0.112 Tj P tot (t) C th1 C th2 C th,n T am b Symbol IS ISM VSD trr Qrr Irrm dirr /dt Conditions min. TC=25C Values typ. 1 370 3.6 25 700 max. 7.6 22.8 1.2 - Unit A V GS=0V, IF=IS V R=400V, IF=IS , diF/dt=100A/s - V ns C A A/s Tj=25C Value SPA 0.024 0.046 0.085 0.195 0.45 2.511 R th1 Unit K/W Symbol Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPP_B 0.00012 0.0004578 0.000645 0.001867 0.004795 0.045 SPA 0.00012 0.0004578 0.000645 0.001867 0.007558 0.412 Unit Ws/K E xternal H eatsink Page 4 2003-06-27 Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 1 Power dissipation Ptot = f (TC) 100 SPP08N50C3 2 Power dissipation FullPAK Ptot = f (TC) 35 W 80 70 W 25 Ptot 60 50 40 30 20 Ptot 20 15 10 5 20 40 60 80 100 120 10 0 0 0 0 C 160 20 40 60 80 100 120 TC C 150 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 2 10 V VDS 3 Page 5 2003-06-27 Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 5 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 1 6 Transient thermal impedance FullPAK ZthJC = f (tp) parameter: D = tp/t 10 1 K/W K/W 10 0 10 0 ZthJC 10 -1 ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -1 10 -2 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp 7 Typ. output characteristic ID = f (VDS); Tj =25C parameter: tp = 10 s, VGS 24 8 Typ. output characteristic ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS 13 A 20V 10V 8V A 7V 11 10 20V 8V 6.5V 6V ID ID 16 6,5V 9 8 7 5.5V 12 6V 6 5 5V 8 5,5V 4 3 4.5V 4V 4 5V 4,5V 2 1 25 0 0 2 4 6 8 0 0 5 10 15 VDS 10 12 14 16 18 20 22 V 25 V VDS Page 6 2003-06-27 Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 10 10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V 3.4 SPP08N50C3 8 4V 4.5V 2.8 RDS(on) 5.5V RDS(on) 7 6 5 4 3 2 1 0 0 5V 2.4 2 1.6 1.2 0.8 0.4 0 -60 98% typ 6V 6.5V 8V 20V 2 4 6 8 10 12 A 15 ID -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 24 12 Typ. gate charge VGS = f (QGate) parameter: ID = 7.6 A pulsed 16 SPP08N50C3 A 25C V 20 18 12 VGS ID 16 14 12 10 150C 10 0,2 VDS max 0,8 VDS max 8 6 8 6 4 2 2 0 0 2 4 6 4 V 10 0 0 5 10 15 20 25 30 35 40 nC 50 VGS QGate Page 7 2003-06-27 Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPP08N50C3 14 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 8 A A 6 IAR 10 1 IF 5 T j(START)=25C 4 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 3 T j(START)=125C 2 1 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 VSD 4 s 10 tAR 15 Avalanche energy EAS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 260 16 Drain-source breakdown voltage V(BR)DSS = f (Tj) 600 SPP08N50C3 mJ 220 V V(BR)DSS C 200 570 560 550 540 530 520 510 500 490 480 470 460 EAS 180 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120 160 450 -60 -20 20 60 100 C 180 Tj Page 8 Tj 2003-06-27 Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 17 Avalanche power losses PAR = f (f ) parameter: EAR =0.5mJ 500 18 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 pF W 10 3 Ciss PAR 300 C 10 2 200 Coss 10 1 100 Crss 04 10 10 5 MHz f 10 6 10 0 0 100 200 300 V 500 VDS 19 Typ. Coss stored energy Eoss=f(VDS) 4 J 3 E oss 2.5 2 1.5 1 0.5 0 0 100 200 300 V 500 VDS Page 9 2003-06-27 Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 Definition of diodes switching characteristics Page 10 2003-06-27 Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO-220-3-1 B 10 0.4 3.7 0.2 A 1.270.13 4.44 15.38 0.6 2.8 0.2 C 5.23 0.9 13.5 0.5 3x 0.75 0.1 1.17 0.22 2x 2.54 0.25 M 0.5 0.1 2.510.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 9.98 0.48 0.05 Page 11 2003-06-27 Final data SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO-262-3-1 (I2-PAK) 10 0.2 0...0.3 8.5 1) 1) A B 4.4 1.27 1 0.3 11.6 0.3 2.4 C 4.55 0.2 13.5 0.5 0...0.15 1.05 3 x 0.75 0.1 2 x 2.54 1) 0.5 0.1 2.4 0.25 M ABC Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01) 9.25 0.2 7.55 0.05 Page 12 2003-06-27 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPP08N50C3, SPI08N50C3 SPA08N50C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 13 2003-06-27 |
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